Power scaling of coherent terahertz pulses by stacking GaAs wafers

被引：12
|
作者：
Jiang, Yi [1 ]
Ding, Yujie J. [1 ]
Zotova, Ioulia B. [2 ]
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
[2] ArkLight, Center Valley, PA 18034 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 24期
关键词：
gallium arsenide; III-V semiconductors; scaling phenomena; submillimetre wave generation;
D O I：
10.1063/1.3049592
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate that the average output power of the terahertz pulses generated by difference-frequency generation in stacked GaAs wafers is scaled up by a factor of 160. Such power scaling is made possible by achieving first-order quasiphase matching for the efficient terahertz conversion in stacked 590 mu m thick (110) GaAs wafers using two CO2 laser pulses. The highest average output power is measured to be 29.8 mu W by stacking ten wafers.
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页数：3
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