A 10-kS/s 625-Hz-Bandwidth 65-dB SNDR Second-Order Noise-Shaping SAR ADC for Biomedical Sensor Applications

被引:19
|
作者
Hu, Jin [1 ]
Li, Dengquan [1 ]
Liu, Maliang [1 ]
Zhu, Zhangming [1 ]
机构
[1] Xidian Univ, Sch Microelect, Shaanxi Key Lab Integrated Circuits & Syst, Xian 710071, Peoples R China
基金
中国国家自然科学基金;
关键词
Biomedical sensor applications; SAR ADC; low area and power consumption; reused comparator; 65; NM; AMPLIFIER; CMOS;
D O I
10.1109/JSEN.2019.2949641
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper introduces a low-power noise-shaping SAR ADC which is suitable for biomedical sensor applications. In this ADC, a low power consumption and area-efficient integrator is proposed, which is comprised of several switches, replica capacitors and a dynamic amplifier (DA). With a mode control logic circuit, the comparator in the ADC is reused as an amplifier for three times (three amplification phases) in a single conversion period to save area and power consumption. With the introduction of the first amplification phase, the additional capacitance can be greatly reduced without increasing overall kT/C noise. The second and third amplification phases decouple NTF zeros from the attenuation factor, allowing further area reduction. The comparator in amplification mode is designed more robust than prior arts. Fabricated in 0.18 mu m CMOS process, the prototype ADC has a 7-bit DAC and occupies a core area of 0.12mm(2). Operating at 10kS/s, it consumes 90nW from a 1-V supply. At an OSR of 8, the SAR ADC achieves 65dB SNDR resulting in a FoMs of 163.5dB, and a FoM(w) of 50fJ/conv.-step.
引用
收藏
页码:13881 / 13891
页数:11
相关论文
共 16 条
  • [1] A 10-KS/s 625-Hz-Bandwidth 60-dB SNDR Noise-Shaping ADC for Bio-potential Signals Detection Application
    Hu, Jin
    Liu, Maliang
    Liu, Shubin
    Ding, Ruixue
    Zhu, Zhangming
    2018 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2018), 2018, : 46 - 49
  • [2] A 150-MS/s, 65-dB SNDR Fully Passive Bandpass Noise-Shaping SAR ADC
    Lee, Dongsik
    Lee, Seungjun
    Chae, Hyungil
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2024, 71 (03) : 1067 - 1071
  • [3] A 600-MS/s, 65-dB SNDR, 75-MHz BW Time-Interleaved Noise-Shaping SAR ADC
    Baek, Jihyun
    Chae, Hyungil
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2023, 70 (07) : 2315 - 2319
  • [4] A 68 μW 31 kS/s Fully-Capacitive Noise-Shaping SAR ADC with 102 dB SNDR
    Leene, Lieuwe B.
    Letchumanan, Shiva
    Constandinou, Timothy G.
    2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2019,
  • [5] A 625kHz-BW, 79.3dB-SNDR Second-Order Noise-Shaping SAR ADC Using High-Efficiency Error-Feedback Structure
    Yi, Pinyun
    Liang, Yuhua
    Liu, Shubin
    Xu, Nuo
    Fang, Liang
    Hao, Yue
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2022, 69 (03) : 859 - 863
  • [6] A 16.5-μW 73.7-dB-SNDR Second-Order Fully Passive Noise-Shaping SAR ADC With a Hybrid Switching Procedure
    Li, Zheng
    Yang, Yating
    Liu, Mingyang
    Liu, Wei
    Hou, Ying
    Wei, Zihui
    Wang, Xiaosong
    Li, Zhenming
    Huang, Shuilong
    Liu, Yu
    IEEE ACCESS, 2023, 11 : 89298 - 89308
  • [7] A 90-MS/s 11-MHz-Bandwidth 62-dB SNDR Noise-Shaping SAR ADC
    Fredenburg, Jeffrey A.
    Flynn, Michael P.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2012, 47 (12) : 2898 - 2904
  • [8] A 44-μW, 91.3-dB SNDR DT 16 Modulator With Second-Order Noise-Shaping SAR Quantizer
    Wang, Ling
    Liu, Shubin
    Zhang, Yanbo
    Zhong, Longjie
    Zhu, Zhangming
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2023, 70 (09) : 3575 - 3583
  • [9] A Digitally-Calibrated 70.98dB-SNDR 625kliz-Bandwidth Temperature-Tolerant 2nd-order Noise-Shaping SAR ADC in 65nm CMOS
    Yoon, Jae Sik
    Hong, Jiyoon
    Kim, Jintae
    2019 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2019, : 195 - 196
  • [10] A 320-MS/s 2-b/cycle Second-order Noise-shaping SAR ADC
    Park, Jaehyeong
    Park, Sang-Gyu
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2021, 21 (06) : 472 - 482