Sol-gel Barium Titanate-based RRAM by Inserting Graphene Oxide Interlayer

被引：0
|
作者：
Chang, Yu-Chi [1 ]
Wei, Chia-Yu [2 ]
Wang, Yeong-Her [1 ,3 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ Tainan, Adv Optoelectron Technol Ctr, Cheng Kung, Taiwan
[3] Natl Cheng Kung Univ, Inst Microelectron, Tainan, Taiwan
来源：
2012 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID STATE CIRCUIT (EDSSC) | 2012年
关键词：
RRAM; Sol-gel; BTO; graphene;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The barium titanate-based (BTO-based) resistive random-access memory (RRAM) was successfully fabricated by sol-gel process. The ITO/BTO/Al structure showed stable switching behaviors due to it can offer smooth surface by sol-gel methods. Moreover, based on this structure inserted with graphene oxide (GO) interlayers, the device exhibited good stability and enhancement of the on/off current ratio about two orders, which can be attributed to absorption/release of oxygen related functional groups of GO.
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页数：2
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