3-D Simulation of Charge Collection in Double-Gate MOSFET under Low-Energy Proton Irradiation

被引：0
|
作者：
Yan, Shaoan [1 ]
Zhang, Wanli [1 ]
Li, Gang [1 ]
Chen, Yihua [1 ]
Tang, Minghua [1 ]
Li, Zheng [1 ]
机构：
[1] Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
来源：
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年
关键词：
Single event effect; Charge collection; Low-energy Proton irradiation; Double-gate MOSFET (DG MOSFET); HEAVY-ION IRRADIATION; DEVICES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The charge collection in 20 nm double-gate MOSFET (DG MOSFET) submitted to low-energy Proton irradiation are investigated in this paper. The drain current transient and charge collection with different doping levels are simulated. Different strike radii and locations are also discussed in the paper.
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页数：2
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