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Magnetoconductance effect in organic light-emitting devices
被引:6
|作者:

Zhang Yong
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h-index: 0
机构:
Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China

Liu Ya-Li
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China

Jiao Wei
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China

Chen Lin
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China

Xiong Zu-Hong
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Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
机构:
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
基金:
中国国家自然科学基金;
关键词:
organic light-emitting diode;
magnetoconductance;
bipolaron;
electron-hole pair;
MAGNETORESISTANCE;
D O I:
10.7498/aps.61.117106
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Organic light-emitting diode (OLED) based on tris-(8-hydroxyquinoline) aluminum(III) (Alq(3)) is fabricated, and its magnetoconductance (MC) effects are measured at different bias voltages. When the bias voltage is small, the OLED exhibits apparently a negative MC effect. After the bias voltage is increased, the MC value changes from negative to positive, displaying a negative-positive inversion. The MC effects in N, N'-Di(naphthalen-1-yl)-N, N' diphenyl-benzidine (NPB) and Copper phthalocyanine (CuPc) unipolar devices show that the negative MC effect in OLED comes from the CuPc layer in device. The MC effect of bipolar current can be explained using the electron-hole pair model. The MC effect of unipolar current can be attributed to the polaron-bipolaron transition in device. The positive-negative MC inversion in OLED results from the simultaneous contributions of the above two mechanisms during the variation of the injection current.
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- [1] Electron-hole pair mechanism for the magnetic field effect in organic light emitting diodes based on poly(paraphenylene vinylene)[J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (11)Bagnich, S. A.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Darmstadt, Dept Mat Sci, D-64287 Darmstadt, Germany Tech Univ Darmstadt, Dept Mat Sci, D-64287 Darmstadt, GermanyNiedermeier, U.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Darmstadt, Dept Mat Sci, D-64287 Darmstadt, Germany Siemens AG, D-91058 Erlangen, Germany Tech Univ Darmstadt, Dept Mat Sci, D-64287 Darmstadt, GermanyMelzer, C.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Darmstadt, Dept Mat Sci, D-64287 Darmstadt, Germany Tech Univ Darmstadt, Dept Mat Sci, D-64287 Darmstadt, GermanySarfert, W.论文数: 0 引用数: 0 h-index: 0机构: Siemens AG, D-91058 Erlangen, Germany Tech Univ Darmstadt, Dept Mat Sci, D-64287 Darmstadt, Germany论文数: 引用数: h-index:机构:
- [2] Inversion of magnetoresistance in organic semiconductors[J]. PHYSICAL REVIEW LETTERS, 2008, 100 (06)Bergeson, J. D.论文数: 0 引用数: 0 h-index: 0机构: Ohio State Univ, Dept Phys, Columbus, OH 43210 USA Ohio State Univ, Dept Phys, Columbus, OH 43210 USAPrigodin, V. N.论文数: 0 引用数: 0 h-index: 0机构: Ohio State Univ, Dept Phys, Columbus, OH 43210 USA Ohio State Univ, Dept Phys, Columbus, OH 43210 USALincoln, D. M.论文数: 0 引用数: 0 h-index: 0机构: Ohio State Univ, Dept Chem, Columbus, OH 43210 USA Ohio State Univ, Dept Phys, Columbus, OH 43210 USAEpstein, A. J.论文数: 0 引用数: 0 h-index: 0机构: Ohio State Univ, Dept Phys, Columbus, OH 43210 USA Ohio State Univ, Dept Chem, Columbus, OH 43210 USA Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
- [3] Separating positive and negative magnetoresistance in organic semiconductor devices[J]. PHYSICAL REVIEW LETTERS, 2007, 99 (25)Bloom, F. L.论文数: 0 引用数: 0 h-index: 0机构: Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands Eindhoven Univ Technol, Ctr NanoMat, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands论文数: 引用数: h-index:机构:Kemerink, M.论文数: 0 引用数: 0 h-index: 0机构: Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands Eindhoven Univ Technol, Ctr NanoMat, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands论文数: 引用数: h-index:机构:
- [4] Correspondence of the sign change in organic magnetoresistance with the onset of bipolar charge transport[J]. APPLIED PHYSICS LETTERS, 2008, 93 (26)Bloom, F. L.论文数: 0 引用数: 0 h-index: 0机构: Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands论文数: 引用数: h-index:机构:Kemerink, M.论文数: 0 引用数: 0 h-index: 0机构: Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, NetherlandsKoopmans, B.论文数: 0 引用数: 0 h-index: 0机构: Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands Eindhoven Univ Technol, Dept Appl Phys, Ctr Nanomat, NL-5600 MB Eindhoven, Netherlands
- [5] Bipolaron mechanism for organic magnetoresistance[J]. PHYSICAL REVIEW LETTERS, 2007, 99 (21)Bobbert, P. A.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Eindhoven, Grp Polymer Phys, NL-5600 MB Eindhoven, NetherlandsNguyen, T. D.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Eindhoven, Grp Polymer Phys, NL-5600 MB Eindhoven, Netherlandsvan Oost, F. W. A.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Eindhoven, Grp Polymer Phys, NL-5600 MB Eindhoven, NetherlandsKoopmans, B.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Eindhoven, Grp Polymer Phys, NL-5600 MB Eindhoven, NetherlandsWohlgenannt, M.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Eindhoven, Grp Polymer Phys, NL-5600 MB Eindhoven, Netherlands
- [6] The role of magnetic fields on the transport and efficiency of aluminum tris(8-hydroxyquinoline) based organic light emitting diodes[J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)Desai, P.论文数: 0 引用数: 0 h-index: 0机构: Univ London, Dept Phys, London E1 4NS, England Univ London, Dept Phys, London E1 4NS, EnglandShakya, P.论文数: 0 引用数: 0 h-index: 0机构: Univ London, Dept Phys, London E1 4NS, England Univ London, Dept Phys, London E1 4NS, EnglandKreouzis, T.论文数: 0 引用数: 0 h-index: 0机构: Univ London, Dept Phys, London E1 4NS, England Univ London, Dept Phys, London E1 4NS, EnglandGillin, W. P.论文数: 0 引用数: 0 h-index: 0机构: Univ London, Dept Phys, London E1 4NS, England Univ London, Dept Phys, London E1 4NS, England
- [7] Magnetic field effects on the electroluminescence of organic light emitting devices: A tool to indicate the carrier mobility[J]. APPLIED PHYSICS LETTERS, 2010, 97 (16)Ding, B. F.论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaYao, Y.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaSun, Z. Y.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaWu, C. Q.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaGao, X. D.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaWang, Z. J.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaDing, X. M.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaChoy, W. C. H.论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaHou, X. Y.论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
- [8] Magnetic field effects on the conductivity of organic bipolar and unipolar devices at room temperature[J]. SYNTHETIC METALS, 2010, 160 (3-4) : 317 - 319Gomez, J. A.论文数: 0 引用数: 0 h-index: 0机构: Univ Sao Paulo, Dept Fis & Matemat, BR-14040901 Ribeirao Preto, Brazil Univ Sao Paulo, Dept Fis & Matemat, BR-14040901 Ribeirao Preto, BrazilNueesch, F.论文数: 0 引用数: 0 h-index: 0机构: Swiss Fed Labs Mat Testing & Res, CH-8600 Dubendorf, Switzerland Univ Sao Paulo, Dept Fis & Matemat, BR-14040901 Ribeirao Preto, BrazilZuppiroli, L.论文数: 0 引用数: 0 h-index: 0机构: Ecole Polytech Fed Lausanne, Lab Optoelect Mat Mol, CH-1015 Lausanne, Switzerland Univ Sao Paulo, Dept Fis & Matemat, BR-14040901 Ribeirao Preto, BrazilGraeff, C. F. O.论文数: 0 引用数: 0 h-index: 0机构: Univ Estadual Paulista, Dept Fis, BR-17033360 Bauru, Brazil Univ Sao Paulo, Dept Fis & Matemat, BR-14040901 Ribeirao Preto, Brazil
- [9] Tuning magnetoresistance between positive and negative values in organic semiconductors[J]. NATURE MATERIALS, 2007, 6 (12) : 985 - 991Hu, Bin论文数: 0 引用数: 0 h-index: 0机构: Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USAWu, Yue论文数: 0 引用数: 0 h-index: 0机构: Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
- [10] The role of magnetic fields on the efficiency of OLED of double quantum well structures[J]. ACTA PHYSICA SINICA, 2010, 59 (09) : 6642 - 6646Jiang Wen-Long论文数: 0 引用数: 0 h-index: 0机构: Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaMeng Zhao-Hui论文数: 0 引用数: 0 h-index: 0机构: Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaCong Lin论文数: 0 引用数: 0 h-index: 0机构: Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaWang Jin论文数: 0 引用数: 0 h-index: 0机构: Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaWang Li-Zhong论文数: 0 引用数: 0 h-index: 0机构: Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaHan Qiang论文数: 0 引用数: 0 h-index: 0机构: Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaMeng Fan-Chao论文数: 0 引用数: 0 h-index: 0机构: Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R ChinaGao Yong-Hui论文数: 0 引用数: 0 h-index: 0机构: Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China Jilin Normal Univ, Coll Informat & Technol, Siping 136000, Peoples R China