Comparison of a new dead-time correction method and conventional models for SIMS analysis

被引：2

作者：

Takano, Akio ^{[1
]}

Takenaka, Hisataka ^{[1
]}

Ichimaru, Satoshi ^{[1
]}

Nonaka, Hidehiko ^{[2
]}

机构：

[1] NTT Adv Technol Corp, Atsugi, Kanagawa 2430124, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

SURFACE AND INTERFACE ANALYSIS | 2012年 / 44卷 / 09期

关键词：

SIMS; detector; saturation; intermediate dead-time model;

D O I：

10.1002/sia.5004

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Recently, secondary ion mass spectrometry (SIMS) has been used in the analysis of not only impurities but also matrix elements, thus requiring a wide dynamic range for SIMS analysis. However, SIMS detectors, which are mostly used in pulse counting systems, have difficulties with detector saturation. In this paper, we investigate whether a dead-time model that was developed for X-ray measurement is applicable for SIMS analysis. We then compare a new correction method with conventional correction methods for detector saturation in SIMS analysis. We report that the new method can better correct the intensity in regions of higher intensity than that achieved by conventional methods. Copyright (c) 2012 John Wiley & Sons, Ltd.

引用

页码：1287 / 1293

页数：7

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