A GaN Schottky Diode-Based Analog Phase Shifter MMIC

被引：0

作者：

Jin, Chong ^{[1
]}

Okada, Etienne ^{[1
]}

Faucher, Marc ^{[1
]}

Ducatteau, Damien ^{[1
]}

Zaknoune, Mohammed ^{[1
]}

Pavlidis, Dimitris ^{[1
,2
]}

机构：

[1] IEMN, UMR8520, F-59652 Villeneuve Dascq, France

[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

来源：

2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年

关键词：

Phase shifter; Gallium nitride; Schottky diode;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in view of its potential for robust power operation. The phase shifter presents analog phase shifting capability up to 45 degrees with similar to 7 dB insertion loss and a maximum VSWR of 2: 1 in the 32 to 38 GHz range. Good power handling capability and robust performance is demonstrated through large signal analysis and experimental characterization.

引用

页码：96 / 99

页数：4

共 50 条

[1] Schottky diode-based terahertz frequency multipliers and mixers
Maestrini, Alain
Thomas, Bertrand
Wang, Hui
Jung, Cecile
Treuttel, Jeanne
Jin, Yong
Chattopadhyay, Goutam
Mehdi, Imran
Beaudin, Gerard
[J]. COMPTES RENDUS PHYSIQUE, 2010, 11 (7-8) : 480 - 495
[2] A SiGe MMIC 6-bit PIN diode phase shifter
Teshiba, M
Van Leeuwen, R
Sakamoto, G
Cisco, T
[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2002, 12 (12) : 500 - 501
[3] GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission
Li, Yang
Pu, Tao-Fei
Li, Xiao-Bo
Zhong, Yi-Run
Yang, Lin-An
Fujiwara, Shigeki
Kitahata, Hiroshi
Ao, Jin-Ping
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 4123 - 4129
[4] A Single Diode-Based Reflective Type Variable Analog Attenuator
Talha, Mohamed
Darwish, Mohammad
Kader, Fathy Mohamed Abdel
Abounemra, Ahmed M. Elelimy
[J]. 2024 14TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, ICEENG 2024, 2024, : 106 - 109
[5] SCHOTTKY DIODE-BASED MICROWAVE LIMITER WITH ADJUSTABLE THRESHOLD POWER LEVEL
Bera, S. C.
Basak, K.
Jain, V. K.
Singh, R. V.
Garg, V. K.
[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2010, 52 (07) : 1671 - 1673
[6] A W-Band GaN MMIC Continuous 90° Reflective Phase Shifter
Romano, Anthony
Sonnenberg, Timothy
Verploegh, Shane
Barton, Taylor
Popovic, Zoya
[J]. 2022 IEEE 22ND ANNUAL WIRELESS AND MICROWAVE TECHNOLOGY CONFERENCE (WAMICON), 2022,
[7] DECADE BANDWIDTH HYBRID ANALOG PHASE-SHIFTER USING MMIC REFLECTION TERMINATIONS
LUCYSZYN, S
ROBERTSON, ID
[J]. ELECTRONICS LETTERS, 1992, 28 (11) : 1064 - 1065
[8] Physical Electro-Thermal Model for the Design of Schottky Diode-Based Circuits
Perez-Moreno, Carlos G.
Grajal, Jesus
[J]. IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2014, 4 (05) : 597 - 604
[9] A Metamaterial-Based Passive MMIC Tunable Phase Shifter
Abdalla, Mohamed A. Y.
Phang, Khoman
Eleftheriades, George V.
[J]. 2010 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM, 2010,
[10] The Cu Based AlGaN/GaN Schottky Barrier Diode
李迪
贾利芳
樊中朝
程哲
王晓东
杨富华
何志
[J]. Chinese Physics Letters, 2015, (06) : 196 - 198

← 1 2 3 4 5 →