Numerical simulations of propagation of SCWs in strained Si/SiGe heterostructures at 4.2 and 77 K

被引：1

作者：

Garcia-B, Abel ^{[1
]}

Grimalsky, Volodymyr ^{[1
]}

Gutierrez-D, Edmundo A. ^{[2
]}

机构：

[1] INAOE, Dept Elect, Puebla, Pue, Mexico

[2] INTEL SRCM, Guadalajara, Jalisco, Mexico

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2007年 / 6卷 / 1-3期

关键词：

Space charge waves; Strained Si/SiGe heterostructure; Negative differential conductance;

D O I：

10.1007/s10825-006-0089-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The negative differential conductance phenomenon that occurs in strained Si/SiGe hetrostructures at low temperatures, have been used to perform numerical simulations of the propagation and amplification of space charge waves (SCWs). The 2D numerical simulations indicate that amplification of SCWs on the surface of the heterostructure may occur up to frequencies of 40 GHz when cooled down to 77 K, and up to 44 GHz at 4.2 K.

引用

页码：137 / 140

页数：4

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