Carrier transport effects in active and passive modelocking of monolithic quantum-well lasers at millimeter-wave frequencies

被引：1

作者：

Vassilovski, D ^{[1
]}

Georges, JB ^{[1
]}

Lau, KY ^{[1
]}

机构：

[1] LGC TECHNOL,BERKELEY,CA 94705

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 12期

关键词：

D O I：

10.1109/68.544691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the effect of carrier transport on active and passive resonantly enhanced modulation of monolithic quantum-well semiconductor lasers. While the ultimate frequency at which narrow-band resonant modulation can be achieved may be severely affected by carrier transport, no such limitation is predicted for passive model coupling.

引用

页码：1603 / 1605

页数：3

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