Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

被引：40
|
作者：
Nagashima, Toru [1 ,2 ]
Kubota, Yuki [1 ]
Kinoshita, Toru [1 ]
Kumagai, Yoshinao [2 ]
Xie, Jinqiao [3 ]
Collazo, Ramon [4 ]
Murakami, Hisashi [2 ]
Okamoto, Hiroshi [5 ]
Koukitu, Akinori [2 ]
Sitar, Zlatko [3 ,4 ]
机构：
[1] Tokuyama Corp, Tsukuba Res Labs, Tsukuba, Ibaraki 3004247, Japan
[2] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan
[3] HexaTech Inc, Morrisville, NC 27560 USA
[4] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[5] Hirosaki Univ, Dept Elect & Informat Technol, Hirosaki, Aomori 0368561, Japan
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 12期
基金：
日本学术振兴会;
关键词：
CRYSTAL-GROWTH; BULK; COMPLEXES;
D O I：
10.1143/APEX.5.125501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Freestanding AlN substrates with various carbon (C) concentrations were prepared from C-doped thick layers grown by hydride vapor phase epitaxy (HVPE) on bulk AlN substrates prepared by physical vapor transport (PVT). The structural properties of the AlN substrates up to a C concentration of 3 x 1019 cm(-3) were the same as those of the nominally undoped substrates, while the absorption coefficient alpha at 265 nm was increased by C doping from 6.6 to 97 cm(-1), when C concentration changed from <2 x 10(17) to 1 x 10(19) cm(-3), respectively. Photoluminescence (PL) below 4.0 eV also increased by C doping. (C) 2012 The Japan Society of Applied Physics
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页数：3
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