Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric

被引:17
|
作者
Yang, B. L. [1 ]
Wong, H. [1 ]
Kakushima, K. [2 ]
Iwai, H. [2 ]
机构
[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan
关键词
INTERFACE; RELIABILITY; CAPACITORS; DEPOSITION; FILMS;
D O I
10.1016/j.microrel.2011.10.009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, the electrical characteristics of MOSFETs with CeO2/La2O3 gate dielectric stacks, where it was shown to have much lower amount of oxygen vacancy, were studied. We found that the negative threshold voltage shift in the La2O3-only transistors can be significantly suppressed. This improvement is attributed to the reduction of oxide charge density and to the dipole at the Si/La2O3 interface. Significant enhancement in channel mobility was also found for both NMOS and PMOS transistors. This latter improvement should be due to the silicon oxidation taking place at the La2O3/Si interface with the available of extra oxygen atoms from the CeO2 layer. We further found that the subthreshold slopes for NMOS and PMOS transistors with 2.5 mu m gate length were reduced to about 72 mV/dec, which are significantly smaller than those of transistors without using CeO2 capping layer. This observation further confirms that the CeO2 capping layer also affects the La2O3/Si interface properties. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1613 / 1616
页数:4
相关论文
共 50 条
  • [1] Subthreshold Characteristics of MOS Transistors With CeO2/La2O3 Stacked Gate Dielectric
    Wong, Hei
    Yang, B. L.
    Kakushima, K.
    Iwai, Hiroshi
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (08) : 1002 - 1004
  • [2] On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric
    Feng, Xuan
    Wong, H.
    Yang, B. L.
    Dong, Shurong
    Iwai, H.
    Kakushima, K.
    MICROELECTRONICS RELIABILITY, 2014, 54 (6-7) : 1133 - 1136
  • [3] Current conduction and stability of CeO2/La2O3 stacked gate dielectric
    Wong, Hei
    Yang, B. L.
    Dong, Shurong
    Iwai, H.
    Kakushima, K.
    Ahmet, P.
    APPLIED PHYSICS LETTERS, 2012, 101 (23)
  • [4] XPS study on the effects of thermal annealing on CeO2/La2O3 stacked gate dielectrics
    Zhang, Jieqiong
    Wong, Hei
    Kakushima, Kuniyuki
    Iwai, Hiroshi
    THIN SOLID FILMS, 2016, 600 : 30 - 35
  • [5] XPS Study on the Effects of Thermal Annealing on CeO2/La2O3 Stacked Gate Dielectrics
    Zhang, Jieqiong
    Wong, Hei
    Iwai, Hiroshi
    Kakushima, Kuniyuki
    TENCON 2015 - 2015 IEEE REGION 10 CONFERENCE, 2015,
  • [6] Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition
    Kouda, Miyuki
    Suzuki, Takuya
    Kakushima, Kuniyuki
    Ahmet, Parhat
    Iwai, Hiroshi
    Yasuda, Tetsuji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (12)
  • [7] Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics
    Wong, H.
    Yang, B. L.
    Kakushima, K.
    Ahmet, P.
    Iwai, H.
    VACUUM, 2012, 86 (07) : 990 - 993
  • [8] Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric
    Qian, L. X.
    Huang, X. D.
    Lai, P. T.
    2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2011,
  • [9] SINTERING OF LIME DOPED WITH LA2O3 AND CEO2
    GHONEIM, NM
    MANDOUR, MA
    SERRY, MA
    CERAMICS INTERNATIONAL, 1989, 15 (06) : 357 - 362
  • [10] Effect of CeO2 and La2O3 on the Activity of CeO2−La2O3/Al2O3-Supported Pd Catalysts for Steam Reforming of Methane
    W. H. Cassinelli
    L. S. F. Feio
    J. C. S. Araújo
    C. E. Hori
    F. B. Noronha
    C. M. P. Marques
    J. M. C. Bueno
    Catalysis Letters, 2008, 120 : 86 - 94