Near-band-edge photoluminescence from ZnO film: Negative thermal quenching and role of adsorbed oxygen

被引：2
|
作者：
Yalishev, Vadim Sh. [1 ]
Yuldashev, Shavkat U. [1 ]
Igamberdiev, Khusan T. [1 ]
Kang, Tae Won [1 ]
Park, Bae Ho [2 ]
机构：
[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Konkuk Univ, Sch Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2014年 / 64卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
ZnO films; Photoluminescence; Adsorption of oxygen; DONOR-ACCEPTOR; BOUND-EXCITON; ADSORPTION;
D O I：
10.3938/jkps.64.1
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We studied the photoluminescence (PL) spectra in the near-band-edge region of undoped ZnO films as a function of temperature to determine the thermal quenching behavior in the emission intensity. The quenching of the PL intensity was found to change to an increasing intensity with increasing temperature in the temperature region from 40 to 60 K. On the other hand, a reduction of the vacuum in the same temperature region was observed and was attributed to desorption of oxygen molecules from the cryostat finger. Further investigation revealed that the increase in the PL intensity was caused by adsorption of oxygen on the surface of ZnO films resulting in a decrease in the number of non-radiative recombination centers.
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页码：1 / 5
页数：5
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