Electronic structure and metal-insulator transition in crystalline magnetic phase-change material Ge1-xFexTe

被引：6
|
作者：
Liu, Jindong [1 ,2 ,3 ,4 ]
Cheng, Xiaomin [1 ,2 ]
Ton, Fei [1 ,2 ]
Miao, Xiangshui [1 ,2 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[4] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 650卷
基金：
中国国家自然科学基金;
关键词：
Magnetic phase-change materials; XPS; Electronic structure; Metal-insulator transition; GETE; SNTE;
D O I：
10.1016/j.jallcom.2015.07.299
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
X-ray photoemission spectroscopy (XPS) and carrier transport measurements were used to investigate the electronic structure of crystalline Ge1-xFexTe films across the metal-insulator transition. Both valence-band XPS analysis and transport properties indicate that the Fermi energy is shifted downward with increasing Fe concentration. This shift is ascribed to that the incorporated Fe atoms give rise to shallow states near the Fermi energy. Temperature-dependent resistivity measurements reveal that Ge1-xFexTe films undergo a transition from insulating to metallic state at Fe concentration x above 0.1. This metal-insulator transition is attributed to disorder-induced Anderson localization. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：70 / 74
页数：5
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