Demonstrate High ROFF/RON Ratio and Forming-Free RRAM for rFPGA Application based on Switching Layer Engineering

被引：0

作者：

Dong, Wenfeng ^{[1
]}

Liu, Dong ^{[2
]}

Xu, Shun ^{[1
]}

Chen, Bing ^{[1
]}

Zhao, Yi ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Polytech Inst, Hangzhou 310027, Zhejiang, Peoples R China

来源：

2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) | 2017年

基金：

中国国家自然科学基金;

关键词：

RRAM; resistive switching; R-ON/R-OFF ratio; FPGA; reconfigurable architecture;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of reconfigurable architectures in field programmable gate array (FPGA) has been addressed great concern by academic and industrial. However, fabricating a nonvolatile device for circuit routing configuration in connection block is still a great challenge. In this paper, a forming-free RRAM technology with high resistance R-ON/R-OFF ratio (similar to 10(6)) is developed for reconfigurable circuits connecting. The demonstrated RRAM with switching layer engineered Pd/Al2O3/HfO2/NiOx/Ni structure shows excellent performance, such as low variation, good retention (>10 years@85 degrees C) and large drive current (>1mA). In addition, corresponding switching mechanism and how to improve RRAM's resistance R-ON/R-OFF ratio by material engineering and device structure optimization are also discussed.

引用

页码：851 / 854

页数：4

共 17 条

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Wu, L.
Fang, Z.
Wang, Z. R.
Pey, K. L.
Yeo, Y. C.
Du, A. Y.
Liu, M.
Nguyen, B. Y.
Li, M. F.
Yu, H. Y.
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