Cu films prepared by bipolar pulsed high power impulse magnetron sputtering

被引：84
|
作者：
Wu, Baohua [1 ,2 ]
Haehnlein, Ian [1 ,3 ]
Shchelkanov, Ivan [1 ]
McLain, Jake [3 ]
Patel, Dhruval [1 ]
Uhlig, Jan [1 ]
Jurczyk, Brian [3 ]
Leng, Yongxiang [2 ]
Ruzic, David N. [1 ]
机构：
[1] Univ Illinois, Dept Nucl Plasma & Radiol Engn, Urbana, IL 61801 USA
[2] Southwest Jiaotong Univ, Chengdu 610031, Sichuan, Peoples R China
[3] Starfire Ind, Urbana, IL 61801 USA
来源：
VACUUM | 2018年 / 150卷
关键词：
Cu metallization; Kick pulse; Deposition rate; Stress; HiPIMS; INTERNAL-STRESS; TARGET; SUBSTRATE; ADHESION; COPPER; BIAS;
D O I：
10.1016/j.vacuum.2018.01.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bipolar pulse High Power Impulse Magnetron Sputtering (HiPIMS) based on conventional HiPIMS is put forward to deposit Cu films on silicon wafers. Positive kick pulses with different pulse width and magnitude are applied after the initial negative pulse to drive Cu ions to the substrate, improving the properties of Cu films. Compared to films deposited by conventional HiPIMS, the Cu films prepared by modified HiPIMS exhibit a higher deposition rate. And the increase in voltage and pulse width of kick pulse results in a reduction of tensile stress of the Cu films. The bipolar pulse HiPIMS has potential applications in Cu metallization for semiconductor processing and other applications. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码：216 / 221
页数：6
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