Single-ended/differential 2.5-GS/s Double Switching Track-and-Hold Amplifier with 26GHz Bandwidth in SiGe BiCMOS Technology

被引：0

作者：

Meyer, Arnaud ^{[1
,2
]}

Desgreys, Patricia ^{[1
]}

Petit, Herve ^{[1
]}

Louis, Bruno ^{[2
]}

Corbiere, Remi ^{[2
]}

机构：

[1] Telecom ParisTech, 46 Rue Barrault, F-75013 Paris, France

[2] Thales Syst Aeroportes France, 2 Av Gay Lussac, F-78990 Elancourt, France

来源：

2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2016年

关键词：

Low distortion; Low attenuation; Track-and-Hold; Balun; THA; switched buffer; Active balun; SiGe BiCMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Distorsion and attenuation occuring during track and hold transition are challenging for Track-and-hold amplifier (THA) with bandwidth larger than 10 GHz. Moreover, single-ended to differential conversion is mainly required for radar applications. A single-ended/differential wideband THA circuit with a specific clock delay line buffer is proposed. The demonstrated technique is robust and results in a low distortion and low attenuation sampling operation for an input power of -5 dBm over the entire bandwidth. The validity of the concept has been demonstrated by a circuit realized in 130 nm SiGe BiCMOS. Furthermore, the proposed compensated balun allows to achieve a low phase difference (+/- 4.5 degrees)and gain variation (0.25 dB) in the [1-26] GHz frequency band. An effective bandwidth of 26 GHz was measured with a Total-Harmonic-Distorsion (THD) of -51dB@10 GHz and 39 dB@20 GHz at a sampling rate of 2.5 GS/s.

引用

页数：3

共 15 条

[1] Above 60 GHz Bandwidth 10 GS/s Sampling Rate Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology
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2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2020,
[2] A 70 GHz Small-signal Bandwidth 40 GS/s Track-and-Hold Amplifier in 130 nm SiGe BiCMOS Technology
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[3] A 2.5-GS/s 62dB THD SiGe Track-and-Hold Amplifier with feedthrough cancellation technique
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2012 19TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2012, : 109 - 112
[4] A 30GS/s Double-Switching Track-and-Hold Amplifier with 19dBm IIP3 in an InP BiCMOS Technology
Gathman, Timothy D.
Madsen, Kristian N.
Li, James C.
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[5] Single-Ended/Differential Wideband Track-and-Hold Amplifier in 22-nm FD-SOI CMOS Process
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IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2025, 33 (04) : 942 - 952
[6] A 2Gsample/s 8b track-and-hold Amplifier in 0.18μm sige BiCMOS technology
Zhang, Yi
Meng, Qiao
Zhang, Li
Li, Wei
Zhang, Y. (iroizhangyi@gmail.com), 1600, ICIC Express Letters Office, Tokai University, Kumamoto Campus, 9-1-1, Toroku, Kumamoto, 862-8652, Japan (07): : 2663 - 2668
[7] An 8 GS/s 20 GHz bandwidth master-slave track-and-hold amplifier in 65 nm CMOS
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Kang, Sungbin
Jung, Heechang
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MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2018, 60 (12) : 3080 - 3084
[8] 32-GS/s SiGe Track-and-Hold Amplifier with 58-GHz Bandwidth and-64-dBc to-29-dBc HD3
Thomas, Philipp
Groezing, Markus
Berroth, Manfred
2020 27TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2020,
[9] Design of a 1-GSample/s 9-b double sampling track-and-hold amplifier in BiCMOS technology
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Lai, Yen-Tai
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2014, 42 (05) : 511 - 528
[10] 64-GS/s 6-bit Track-and-Hold Circuit With More Than 61 GHz Bandwidth at 1.0 Vpp Input Voltage Swing in 90-nm SiGe BiCMOS Technology
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Groezing, Markus
Berroth, Manfred
2021 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2021,

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