共 50 条
- [1] Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (2 A): : 467 - 471
- [2] Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (2A): : 467 - 471
- [4] 1.21 μm continuous-wave operation of highly strained GaInAs quantum well lasers an GaAs substrates JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB): : L990 - L992
- [5] 1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 μm band 2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, 2000, : 71 - 72
- [8] 1.23μm long wavelength highly strained GaInAs/GaAs quantum well laser 2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 618 - 619