The InP/GaAsSb type-II heterostructure system and its application to high-speed DHBTs and photodetectors: Physics, surprises, and opportunities (INVITED)

被引：0

作者：

Bolognesi, CR ^{[1
]}

Liu, HG ^{[1
]}

Tao, NG ^{[1
]}

Zheng, L ^{[1
]}

Zhang, X ^{[1
]}

Watkins, SP ^{[1
]}

机构：

[1] Simon Fraser Univ, Sch Engn Sci, CSDL, Burnaby, BC V5A 1S6, Canada

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The InP/GaAsSb/InP "type-II" heterostructure system is of interest for high-speed devices such as photodetectors and double heterostructure bipolar transistors (DHBTs) because its band alignment enables the straightforward injection of electrons from a similar to 0.72 eV p-type GaAsSb layer into n-type InP without any need for interface grading. We briefly review the salient features of the InP-GaAsSb system, and consider some of the surprising device characteristics encountered in InP/GaAsSb-based devices. In several respects, the lnP/GaAsSb system is shown to offer very appealing opportunities for the development of high-speed NpN DHBTs with ultrathin base and collector layers.

引用

页码：799 / 802

页数：4

共 11 条

[1] Extraction of the average collector velocity in high-speed "type-II" InP-GaAsSb-InP DHBTs
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[2] Extrinsic Base Surface Passivation in High Speed "Type-II" GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure
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[5] Type-II base-collector performance advantages and limitations in high-speed NpN double heterojunction bipolar transistors (DHBTs)
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