Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

被引：104

作者：

Tanaka, Kenichiro ^{[1
]}

Morita, Tatsuo ^{[1
]}

Umeda, Hidekazu ^{[1
]}

Kaneko, Saichiro ^{[1
]}

Kuroda, Masayuki ^{[1
]}

Ikoshi, Ayanori ^{[1
]}

Yamagiwa, Hiroto ^{[1
]}

Okita, Hideyuki ^{[1
]}

Hikita, Masahiro ^{[1
]}

Yanagihara, Manabu ^{[1
]}

Uemoto, Yasuhiro ^{[1
]}

Takahashi, Satoru ^{[1
]}

Ueno, Hiroaki ^{[1
]}

Ishida, Hidetoshi ^{[1
]}

Ishida, Masahiro ^{[1
]}

Ueda, Tetsuzo ^{[1
]}

机构：

[1] Panasonic Corp, Automot & Ind Syst Co, Div Engn, Kyoto 6178520, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 16期

关键词：

ELECTRON-MOBILITY TRANSISTORS; FIELD-EFFECT TRANSISTORS; ALGAN/GAN HEMTS; SEMICONDUCTOR; DEGRADATION; VOLTAGE; SIMULATION;

D O I：

10.1063/1.4934184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current collapse is suppressed up to 800 V of drain voltage in our proposed device, Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT), where an additional p-GaN layer is grown on the AlGaN barrier layer and is connected to the drain electrode. We present, based on a device simulation and electroluminescence study, that the hole injection from the additional drain-side p-GaN at the OFF state compensates the hole emission in the epilayer. As a result, the gate-drain access region is not negatively charged at the OFF state, resulting in the drastic suppression of current collapse in HD-GIT. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 19 条

[1] Reliability of Hybrid-Drain-embedded Gate Injection Transistor
Tanaka, Kenichiro
Morita, Tatsuo
Ishida, Masahiro
Hatsuda, Tsuguyasu
Ueda, Tetsuzo
Yokoyama, Kazuki
Ikoshi, Ayanori
Hikita, Masahiro
Toki, Masahiro
Yanagihara, Manabu
Uemoto, Yasuhiro
2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2017,
[2] Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor
Tanaka, Kenichiro
Umeda, Hidekazu
Ishida, Hidetoshi
Ishida, Masahiro
Ueda, Tetsuzo
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (05)
[3] High-energy proton irradiation effects on GaN hybrid-drain-embedded gate injection transistors
Floriduz, Alessandro
Devine, James D.
MICROELECTRONICS RELIABILITY, 2020, 110
[4] Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT
Sun, Jinming
Haeberlen, Oliver
Ostermaier, Clemens
Prechtl, Gerhard
Tadikonda, Ramakrishna
Persson, Eric
Garg, Reenu
Imam, Mohamed
Khalil, Sameh
Charles, Alain
AIP ADVANCES, 2021, 11 (05)
[5] Lifetime Evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under Practical Switching Operations
Ikoshi, Ayanori
Toki, Masahiro
Yamagiwa, Hiroto
Arisawa, Daijiro
Hikita, Masahiro
Suzuki, Kazuki
Yanagihara, Manabu
Uemoto, Yasuhiro
Tanaka, Kenichiro
Ueda, Tetsuzo
2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2018,
[6] Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation
Uemoto, Yasuhiro
Hikita, Masahiro
Ueno, Hiroaki
Matsuo, Hisayoshi
Ishida, Hidetoshi
Yanagihara, Manabu
Ueda, Tetsuzo
Tanaka, Tsuyoshi
Ueda, Daisuke
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) : 3393 - 3399
[7] Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C
Ishii, Hajime
Ueno, Hiroaki
Ueda, Tetsuzo
Endoh, Tetsuo
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (06)
[8] AlGaN/GaN-based normally-off GaN MOSFET with stress controlled 2DEG source and drain
Im, Ki-Sik
Ha, Jong-Bong
Kim, Ki-Won
Lee, Jong-Sub
Kim, Dong-Seok
Choi, Hyun-Chul
Lee, Jung-Hee
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
[9] High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current
Yu, Cheng
Wang, Fangzhou
He, Junxian
Zhang, Yujian
Sun, Ruize
Xu, Wenjun
Ding, Guojian
Feng, Qi
Wang, Xiaohui
Wang, Yang
He, Miao
Chen, Wanjun
Jia, Haiqiang
Chen, Hong
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 11 (08)
[10] Experimental Study on the Electrical Characteristic of a GaN Hybrid Drain-embedded Gate Injection Transistor (HD-GIT)
Fong, Y. C.
Cheng, K. W. E.
2017 7TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS SYSTEMS AND APPLICATIONS - SMART MOBILITY, POWER TRANSFER & SECURITY (PESA), 2017,

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