Fabrication Technique and Transportation Properties of WS2/graphene Heterojunction

被引：0

作者：

Tian, Yan ^{[1
]}

Guo, ZeKun ^{[1
]}

Gan, Haibo ^{[1
]}

Chen, Jun ^{[1
]}

Xu, Ningsheng ^{[1
]}

Liu, Fei ^{[1
]}

Deng, Shaozhi ^{[1
]}

机构：

[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2017年

关键词：

WS2; heterojunction; fabrication technique; the electric transportation; CHEMICAL-VAPOR-DEPOSITION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to its potential applications in optoelectric area, WS2/graphene heterojunction attracts much attention in past years. But until now, modulation of their working performance is still a big challenge for the researchers. In this work, WS2/graphene heterojunctions have been sucessfully fabricated on Si substrate. Moreover, their surface configuration were researched by STM and AFM techniques. Finally, they are integrated into back-gated MOSFET devices to research their working performances.

引用

页数：2

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