Field Enhancement Due to Surface Structuring During Aluminum Induced Crystallization of Amorphous Silicon

被引：0
|
作者：
Burford, Nathan [1 ]
El-Shenawee, Magda [1 ]
Shumate, Seth [2 ]
Hutchings, Douglas [2 ]
Naseem, Hameed [2 ]
机构：
[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
[2] Silicon Solar Solut LLC, Fayetteville, AR 72701 USA
来源：
2012 IEEE ANTENNAS AND PROPAGATION SOCIETY INTERNATIONAL SYMPOSIUM (APSURSI) | 2012年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Aluminum induced crystallization (AIC) of amorphous silicon (a-Si) may potentially be causing the formation of plasmonic nanostructures on the silicon surface. Field enhancement within the silicon layer will be quantified in order to develop an understanding of the observed enhancement. Computer simulations using HFSS are presented here. The electric fields absorbed inside the silicon are obtained as a function of the incident wavelength due to irregular nanostructures of aluminum patches to simulate the induced aluminum-silicon patches.
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页数：2
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