Total ionizing dose effects on the analog performance of a 0.13 μm CMOS technology

被引：0
|
作者：
Re, V [1 ]
Manghisoni, M [1 ]
Ratti, L [1 ]
Speziali, V [1 ]
Traversi, G [1 ]
机构：
[1] Univ Bergamo, Dipartimento Ing Ind, I-24044 Dalamine, BG, Italy
来源：
NSREC: 2005 IEEE Radiation Effects Data Workshop, Workshop Record | 2005年
关键词：
deep submicron; MOSFET; noise; ionizing radiation;
D O I：
暂无
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
This paper presents a study of the ionizing radiation tolerance of static, signal and noise characteristics of 0.13 mu m CMOS transistors, in the context of designing rad-hard analog integrated circuits. Device parameters were monitored before and after irradiation with (CO)-C-60 gamma-rays at a 10 Mrad(SiO2) total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.
引用
收藏
页码：122 / 126
页数：5
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