DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computer-aided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length (L-GS) and aperture length (L-AP). We analyze DC and RF parameters inducing on-state current (I-on), threshold voltage (V-t), breakdown voltage (V-B), transconductance (g(m)), gate capacitance (C-gg) cut-off frequency (f(T)), and maximum oscillation frequency (f(max)).