Microstructure and Tunneling Magnetoresistive Characteristics of Laser-Irradiated Magnetic Data Recording Head

被引:1
|
作者
Rakpongsiri, Pornchai [1 ,2 ]
Pintasiri, Suphakit [2 ]
Ruthe, Kurt [2 ]
Tungasmita, Sukkaneste [1 ,3 ]
机构
[1] Chulalongkorn Univ, Grad Sch, Nanosci & Technol Program, Bangkok 10330, Thailand
[2] Western Digital Corp, Phra Nakhon Si Ayutthaya 13160, Thailand
[3] Chulalongkorn Univ, Dept Phys, Fac Sci, Bangkok 10330, Thailand
关键词
Tunneling magnetoresistance; Magnetic heads; Magnetic recording; Magnetic tunneling; Measurement by laser beam; Perpendicular magnetic anisotropy; Magneto-electronics; information storage; recording heads; tunneling magnetoresistance; heat-assisted magnetic recording;
D O I
10.1109/LMAG.2020.3014838
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Heat-assisted magnetic recording is a future hard disk drive (HDD) technology for extremely increasing areal density. The tunneling magnetoresistive (TMR) device structure, located inside the magnetic read-write head of a hard drive, is the most complex and sensitive component, which contains sensitive components, such as a touchdown sensor and a near-field transducer. The laser used in the writing process might cause degradation of magnetic head components. The effects of laser irradiation on the TMR device have been investigated using a quasi-static test measurement to observe the characteristic changes of the magnetic response sensitivity function. The results showed only the amplitude degradation, as the resistance and asymmetry parameters were unchanged. The nanostructure of the degradation TMR devices was investigated by using scanning transmission electron microscopy and X-ray energy-dispersive spectrometry. It was found that the manganese depletion in the antiferromagnetic layer causes a nonactive zone due to the poor magnetic coupling pinning function and reduces the functioning of the HDD. The ratio of active and nonactive zone elements has a strong correlation to the amplitude degradation of individual TMR devices. The TMR structure with shorter strip height can have a higher risk of device degradation.
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页数:5
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