Femtosecond-laser-induced delamination and blister formation in thermal oxide films on silicon (100)

被引:36
|
作者
McDonald, JP
Mistry, VR
Ray, KE
Yalisove, SM
Nees, JA
Moody, NR
机构
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
[3] Sandia Natl Labs, Livermore, CA 94551 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2193777
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon (100) substrates with thermal oxide films of varying thickness were irradiated with single and multiple 150 fs laser pulses at normal and non-normal incidences. A range of laser fluence was found in which a blister or domelike feature was produced where the oxide film was delaminated from the substrate. At normal and non-normal incidences blister features were observed for samples with 54, 147, and 1200 nm of thermal oxide. The blister features were analyzed with optical and atomic force microscopy. In addition, the time frame for blister growth was obtained using pump-probe imaging techniques.
引用
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页数:3
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