In situ growth of polycrystalline bismuth-iron-garnet films on quartz glass substrate

被引:2
|
作者
Okuda, T
Kudoh, A
Yoshihara, S
Adachi, N
Ohsato, H
机构
[1] Section of Inorganic Materials, Dept. of Mat. Sci. and Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya, 466, Gokiso-cho
来源
JOURNAL DE PHYSIQUE IV | 1997年 / 7卷 / C1期
关键词
D O I
10.1051/jp4:19971287
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Polycrystalline (Bi,Gd),(Fe, Ga)(5)O-12 garnet layer was prepared on a quartz glass substrate at 500 degrees C by alternating reactive ion beam sputtering using two ceramic targets, Gd3Ga5O12, and 3Bi(2)O(3)-5Fe(2)O(3). The lattice constant was 12.548 Angstrom. The layer was almost magnetically compensated and paramagnetic. On that layer, polycrystalline Bi3Fe5O12 garnet layer was epitaxially grown by reactive ion beam sputtering. Those two layers were successively deposited in the same apparatus.
引用
收藏
页码:707 / 708
页数:2
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