Components of Micro- and Nanoelectronics Based on Silicon Structures for Cryogenic Temperatures

The paper deals with the solution of scientific and applied problems of development of elements of sensing equipment on the basis of silicon-on-insulator structures (SOI) doped with boron impurities. The paper presents the impedance measurements of electrical properties of polycrystalline silicon films (with concentration ranged from 2.4x10(18) cm(-3) to 1.7x10(20)cm(-3)) in the silicon-on-insulator structures obtained in the temperature range 4,2-70K in the frequency range from 10Hz to 250kHz as well as checking a possibility of their use as components of solid state electronics efficient at cryogenic temperatures. Based on silicon-on-insulator structures the discrete solid state elements (inductive, capacitive elements) and combined elements (oscillatory circuits) implemented by positioning technologies were developed. To design the oscillatory circuit a combination of two elements consisting of SOI-structure with a dopant concentration corresponding to the dielectric and metal side of metal-insulator transition (obtaining by double diffusion of boron impurities in polysilicon) was used.