Vapor-phase epitaxial growth on porous 6H-SiC analyzed by Raman scattering

被引：25
|
作者：
Spanier, JE
Dunne, GT
Rowland, LB
Herman, IP [1 ]
机构：
[1] Columbia Univ, Dept Appl Phys, New York, NY 10027 USA
[2] Columbia Univ, Columbia Radiat Lab, New York, NY 10027 USA
[3] Sterling Semicond Inc, Sterling, VA 20166 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 26期
关键词：
D O I：
10.1063/1.126807
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SiC vapor-phase epitaxy on porous silicon carbide (PSC) substrates formed by electrochemical anodization is reported. Raman scattering indicates that the polytype of the optically smooth SiC grown on PSC formed in both p-type and n-type 6H substrates is 6H. The Raman scattering selection rules in these films are the same as those observed in the bulk substrate and epilayers grown on bulk, indicating high crystalline quality. The formation of epitaxial 6H-SiC on porous 6H-SiC may open up new possibilities for dielectric device isolation, fabrication, and epitaxial lift-off. (C) 2000 American Institute of Physics. [S0003-6951(00)01026-3].
引用
收藏
页码：3879 / 3881
页数：3
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