TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells

This study investigates the performance of impact ionization (II) enhanced thin film c-Si solar cells using Technology Computer Aided Design simulation. 2-D numerical simulation is carried out to study the effect of II concerning the electrical and optical properties of the c-Si solar cell. We have introduced pocket with a high doping density of magnitude in an intrinsic absorber layer which increases the electric field near the junction up to 1 MV/m. The effects of II on various solar cell parameters like short circuit current density, open circuit voltage and quantum efficiency are investigated. The simulation results show that high concentration of pocket enhances the short circuit current density of c-Si solar cell without affecting its open circuit voltage . In addition, the modelling results depict that by varying the doping concentration of pocket from to , the current density increases from 18 to . Furthermore, an internal quantum efficiency of 189 % is achieved at pocket doping concentration of .