Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature

被引：32

作者：

Oh, Changyong ^{[1
]}

Jang, Hyunjae ^{[1
]}

Kim, Hyeong Wook ^{[1
]}

Jung, Hyunjae ^{[1
]}

Park, Hyungryul ^{[2
]}

Cho, Johann ^{[2
]}

Kim, Bo Sung ^{[1
]}

机构：

[1] Korea Univ, Dept Appl Phys, Sejong 30019, South Korea

[2] Samsung Corning Adv Glass, R&D Grp, Gumi 730735, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 805卷

关键词：

In-Sn-Ga-O (ITGO); Thin-film transistor (TFT); Oxygen partial pressure; Low temperature; Sputtering; AMORPHOUS OXIDE SEMICONDUCTOR; CARRIER TRANSPORT; HIGH-PERFORMANCE;

D O I：

10.1016/j.jallcom.2019.07.091

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We examined the electrical properties of low-temperature-processed top-gate In-Sn-Ga-O (ITGO) thin-film transistors (TFTs) by rf/dc-sputtering with different oxygen partial pressures (PO2). As PO2 changed from 0 to 50.0%, the ITGO TFT showed various electrical characteristics such as from conductor-like behavior to transfer curves with positive-shifted threshold voltages (Vth). The TFT at PO2 of 25.0% afforded the best performance, exhibiting field-effect mobility of 14.8 cm(2)V(-1)s(-1), Vth of 0.56 V, and subthreshold slope of 0.16 Vdec(-1) with reasonable electrical stability for gate bias stress. From various analysis techniques, we found that the TFT characteristics and the electrical stability strongly depended on the metal-oxygen surface states of the ITGO films influenced by PO2 during the sputtering process. (C) 2019 Elsevier B.V. All rights reserved.

引用

页码：211 / 217

页数：7

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