Interplay between Order and Disorder in the High Performance of Amorphous Transparent Conducting Oxides

被引:93
|
作者
Walsh, Aron [1 ]
Da Silva, Juarez L. F. [3 ]
Wei, Su-Huai [2 ]
机构
[1] UCL, Dept Chem, London WC1E 6BT, England
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
[3] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Carlos, SP, Brazil
关键词
TOTAL-ENERGY CALCULATIONS; THIN-FILMS; SEMICONDUCTORS; DEFECTS;
D O I
10.1021/cm9020113
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We demonstrate, using First-principles calculations, that the exceptional behavior of amorphous transparent conducting oxides formed from In, Zn, Ga, and Al cations arises from the preservation of local crystal order in the cation Centered polyhedra, which is maintained due to the strong charge transfer to oxygen. While tails of localized states may be created above the valence band, the highly delocalized conduction band remains unperturbed, offering effective n-type conduction despite the existence or long-range structural disorder. This is in direct contrast to the paradigm set by amorphous covalent semiconductors.
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页码:5119 / 5124
页数:6
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