Influence of tiny ZnO on luminescence intensity of Zn2SiO4:Mn films

被引：0
|
作者：
Xi Jun-Hua [1 ]
Ji Zhen-Guo [1 ]
Liu Kun [1 ]
Wang Chao [1 ]
Du Juan [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF INORGANIC MATERIALS | 2006年 / 21卷 / 06期
关键词：
Zn2SiO4; ZnO; photoluminescence; quantum confinement-luminescence center;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Magnesium-doped zinc silicate (Zn2SiO4:Mn) was prepared on oxidized silicon wafer by a simple sol-gel process. The crystallinity of films was characterized by X-ray diffraction and optical properties were measured by UV-Vis and photoluminescence spectra. The influence of annealing temperature on films properties was also studied systematically. It's found that proper ZnO can enhance the photoluminescence intensity of Zn2SiO4:Mn films. And the mechanism was explained by using the model of quantum confinement-luminescence center proposed by G.G. Qin.
引用
收藏
页码：1506 / 1510
页数：5
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