Emerging Graphene-Based Electronic & Photonic Devices, Circuits, and Systems

被引:5
|
作者
Towe, Elias [1 ]
Palacios, Tomas [2 ]
Suemitsu, Maki [3 ]
机构
[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[2] Univ Politecn Madrid, Madrid, Spain
[3] Tohoku Univ, Dept Engn, Sendai, Miyagi 980, Japan
关键词
Special issues and sections; Graphene; Photonics; Field effect transistors; Radio frequency; Transistors;
D O I
10.1109/JPROC.2013.2263615
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This special issue aims to highlight some of the different devices and applications currently being pursued. This volume of the Special Issue has 19 papers that roughly cover five subareas that are important for future applications of graphene in electronic and photonic devices, circuits, and systems. The subareas are: 1) epitaxial growth of graphene; 2) single field-effect transistors (FETs), high-frequency RF mixer circuits, frequency multipliers, and oscillators; 3) multiscale modeling of graphene-based transistors; 4) graphene photonics, including plasmonic applications, graphene-based teraHertz devices, and graphene-based photodetectors; and 5) other graphene-based devices and applications such as resistive memory, on-chip interconnects, microelectromechanical systems, and graphene bioelectronics. The papers are briefly summarized here. © 1963-2012 IEEE.
引用
收藏
页码:1518 / 1521
页数:4
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