Temperature Dependent THz Time-Domain Spectroscopy of Carrier Dynamics in GaN Thin Film

被引:0
|
作者
Balci, Soner [1 ]
Baughman, William [1 ]
Wilbert, David S. [1 ]
Butler, Lee [1 ]
Kung, Patrick [1 ]
Kim, Seongsin M. [1 ]
机构
[1] Univ Alabama, Dept Elect & Comp Engn, Tuscaloosa, AL 35487 USA
关键词
BLUE; NITRIDE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the complex refractive index, conductivity, and dielectric constants of GaN thin film in the terahertz frequency as a function of temperature using terahertz time-domain spectroscopy. Temperature dependent carrier dynamics and optical properties are observed in the frequency range from 0.3 to 2.0 THz. Temperature dependent complex conductivity is fitted by a Drude model to find changes in relaxation times and plasma frequencies.
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页数:2
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