Correlation between electrical resistance and defect concentration in graphite under non-hydrostatic stress

被引：1
|
作者：
Andrada-Chacon, A. [1 ]
Baonza, V. G. [1 ]
Sanchez-Benitez, J. [1 ]
机构：
[1] Univ Complutense Madrid, Fac Ciencias Quim, Dept Quim Fis 1, MALTA Consolider Team, Ave Complutense S-N, E-28040 Madrid, Spain
来源：
CARBON | 2017年 / 113卷
关键词：
WALL CARBON NANOTUBES; C-AXIS RESISTIVITY; HIGH-PRESSURE; PYROLYTIC-GRAPHITE; RAMAN-SPECTROSCOPY; GRAPHENE; TEMPERATURE; DEPENDENCE; COLLAPSE; C-60;
D O I：
10.1016/j.carbon.2016.11.058
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Combination of Raman spectroscopy and electrical resistance measurements carried out under non hydrostatic stress reveals a direct correlation between the transport properties and the concentration of structural defects in graphite, as measured by the relative intensity of the D and D' bands. We have found that the piezoelectric behavior of highly defected specimens can be modulated through changes in the microstructure, essentially by affecting the crystallite size. The observed correlation suggests some interesting applications based on the use of Raman spectroscopy as a technique for estimating the relative electrical behavior of microstructurally controlled graphite samples under quasi-uniaxial strain conditions. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：205 / 211
页数：7
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