Maximizing light emission from silicon nanocrystals - The role of hydrogen

被引：6
|
作者：
Wilkinson, AR [1 ]
Elliman, RG [1 ]
机构：
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期
关键词：
nanocrystal; silicon; passivation; hydrogen; luminescence; dangling-bond;
D O I：
10.1016/j.nimb.2005.08.036
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Time-resolved photoluminescence measurements are undertaken to determine the passivation kinetics of luminescence-quenching defects during isothermal and isochronal annealing in molecular and atomic hydrogen. The latter employs an alneal process in which atomic hydrogen is generated by reactions between a deposited Al layer and H2O or -OH radicals in the SiO2. Passivation and desorption kinetics are shown to be consistent with the existence of two classes of non-radiative defects: one that reacts with either atomic or molecular hydrogen.. and the other that reacts only with atomic hydrogen. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：303 / 306
页数：4
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