Spin-dependent electron transport in a Rashba quantum wire with rough edges

被引:6
|
作者
Xiao, X. B. [1 ,2 ]
Li, H. L. [1 ]
Zhou, G. H. [3 ,4 ]
Liu, N. H. [2 ]
机构
[1] Jiangxi Univ Tradit Chinese Med, Sch Comp, Nanchang 330004, Peoples R China
[2] Nanchang Univ, Inst Adv Study, Nanchang 330031, Peoples R China
[3] Hunan Normal Univ, Minist Educ, Dept Phys, Changsha 410081, Peoples R China
[4] Hunan Normal Univ, Minist Educ, Key Lab Low Dimens Quantum Struct & Manipulat, Changsha 410081, Peoples R China
来源
EUROPEAN PHYSICAL JOURNAL B | 2012年 / 85卷 / 09期
基金
中国国家自然科学基金;
关键词
UNIVERSAL CONDUCTANCE FLUCTUATIONS; STATES; WAVES;
D O I
10.1140/epjb/e2012-30335-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We investigate theoretically the spin-dependent electron transport in a Rashba quantum wire with rough edges. The charge and spin conductances are calculated as function of the electron energy and wire length by adopting the spin-resolved lattice Green function method. For a single disordered Rashba wire, it is found that the charge conductance quantization is destroyed by the edge disorder. However, a nonzero spin conductance can be generated and its amplitude can be manipulated by varying the wire length, which is attributed to the broken structure symmetries and the spin-dependent quantum interference induced by the rough boundaries. For a large ensemble of disordered Rashba wires, the average charge conductance decreases monotonically, however, the average spin conductance increases to a maximum value and then decreases, with increasing wire length. Further study shows that the influence of the rough edges on the charge and spin conductances can be eliminated by applying a perpendicular magnetic field to the wire. In addition, a very large magnitude of the spin conductance can be achieved when the electron energy lies between the two thresholds of each pair of subbands. These findings may not only benefit to further apprehend the transport properties of the Rashba low-dimensional systems but also provide some theoretical instructions to the application of spintronics devices.
引用
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页数:7
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