The effects of ZnGa2O4 formation on structural and optical properties of ZnO:Ga powders

被引:45
|
作者
Goncalves, Agnaldo de Souza [1 ]
de Lima, Sergio Antonio Marques [1 ]
Davolos, Marian Rosaly [1 ]
Antonio, Selma Gutierrez [1 ]
Paiva-Santos, Carlos de Oliveira [1 ]
机构
[1] Univ Estadual Paulista, UNESP, Inst Quim, BR-14800900 Araraquara, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
zinc gallate; impurities in semiconductors; crystal structure and symmetry; optical properties; doping; ZnO : Ga; ZnGa3O4; Pechini method;
D O I
10.1016/j.jssc.2006.01.046
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier Inc. All rights reserved.
引用
收藏
页码:1330 / 1334
页数:5
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