Overview of SiC Power Devices and Its Applications in Power Electronic Converters

被引：0

作者：

Qin, Haihong ^{[1
]}

Wen, Jiaopu ^{[1
]}

Zhao, Bin ^{[1
]}

Xu, Wei ^{[1
]}

Yan, Yangguang ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Jiangsu Key Lab New Energy Generat & Power Conver, Nanjing, Jiangsu, Peoples R China

来源：

AEIT 2012: 2012 2ND INTERNATIONAL CONFERENCE ON AEROSPACE ENGINEERING AND INFORMATION TECHNOLOGY, VOL 2 | 2012年

关键词：

Silicon Carbide (SiC); Converter; High Efficiency; High Temperature;

D O I：

暂无

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Due to its high frequency, high power, high temperature and harsh-environment resistant capabilities, silicon carbide (SiC) devices are gaining an increasing demand for power converters. The current status of commercial SiC devices are summarized, and the advantages of SiC devices are described briefly. Then applications of SiC devices in power converters, including PFC, DC/DC, AC/DC, and DC/AC are given, explaining the advantages that SiC devices can bring to system level. And finally, challenges regarding broader implementation of SiC devices and further anticipation for upcoming SiC power devices are given.

引用

页码：448 / 453

页数：6

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