Microstructure difference of Ni induced poly-crystallized SiGe by changing the annealing atmosphere

被引：1

作者：

Yamanaka, Junji ^{[1
]}

Horie, Tadashi ^{[1
]}

Mitsui, Minoru ^{[1
]}

Arimoto, Keisuke ^{[1
]}

Nakagawa, Kiyokazu ^{[1
]}

Sato, Tetsuya ^{[2
]}

Sawano, Kentarou ^{[3
]}

Shiraki, Yasuhiro ^{[3
]}

Moritani, Tomokazu ^{[4
]}

Doi, Minoru ^{[4
]}

机构：

[1] Univ Yamanashi, Ctr Crystal Sci & Technol, Kofu, Yamanashi 4008511, Japan

[2] Univ Yamanashi, Clean Energy Res Ctr, Kofu, Yamanashi 4008511, Japan

[3] Musashi Inst Technol, Adv Res Labs, Res Ctr Silicon Nano Sci, Setagaya Ku, Tokyo 1588586, Japan

[4] Nagoya Inst Technol, Dept Mat Sci & Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 01期

关键词：

Metal Induced Lateral Crystallization; SiGe; Microstructure;

D O I：

10.1016/j.tsf.2008.08.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We considered that the combination of the Ge-addition to Si and the Metal Induced Lateral Crystallization is useful to produce polycrystalline semiconductor films on the glass substrate by a low-temperature process. In this study, we focused on the effects of the atmosphere during annealing. In the case of the N(2)-flow annealing, Ni/Si(0.7)Ge(0.3)/SiO(2) showed more evidence of oxidation than the Ni/Si/SiO(2). It means that the ordinary annealing procedure for Si is not good when the specimen includes both Ge and Ni. This problem was completely solved by using a high-vacuum furnace, the total pressure was similar to 10(-5) Pa, and we succeeded ;in crystallizing SiGe in a large region. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：232 / 234

页数：3

共 17 条

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