Leakage currents in porous PZT films

被引：9
|
作者：
Podgorny, Yu [1 ]
Vorotilov, K. [1 ]
Lavrov, P. [1 ]
Sigov, A. [1 ]
机构：
[1] Moscow Technol Univ MIREA, Moscow, Russia
来源：
FERROELECTRICS | 2016年 / 503卷 / 01期
关键词：
Ferroelectrics; thin film; PZT; porous ceramic films; leakage currents; NEGATIVE DIFFERENTIAL RESISTIVITY; PB(ZR; TI)O-3; THIN-FILMS; DEPOSITION; PVP;
D O I：
10.1080/00150193.2016.1217140
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Charge transport phenomena in porous ceramic PZT films are discussed. The leakage current has been found to be in PZT porous films is 1-1.5 orders higher than for the dense film throughout the whole bias voltage. In the low fields region (similar to 40-160 kV/cm) the main charge transport mechanism is the ohmic conductivity. Static (steady state) conductivity of porous PZT films is 1-2 orders higher than of dense film. The main possible charge transport mechanism in the high fields region (>= 160-180 kV/cm) is the space-charge-limited conduction.
引用
收藏
页码：77 / 84
页数：8
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