Electrical properties of semiconductor quantum dots

被引：7
|
作者：
Kharlamov, V. F. [1 ]
Korostelev, D. A. [1 ]
Bogoraz, I. G. [1 ]
Milovidova, O. A. [1 ]
Sergeyev, V. O. [1 ]
机构：
[1] State Univ, Oryol 302020, Russia
来源：
SEMICONDUCTORS | 2013年 / 47卷 / 04期
关键词：
METAL STRUCTURES;
D O I：
10.1134/S1063782613040131
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A method, which makes it possible to obtain semiconductor particles V a parts per thousand 10(-20) cm(3) in volume (quantum dots) with a concentration of up to 10(11) cm(-2) and electrical contacts to each of them, is suggested. High variability in the electrical properties of such particles from a metal oxide (CuO or NiO) after the chemisorption of gas molecules is found.
引用
收藏
页码：494 / 500
页数：7
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