Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2

被引：1221
|
作者：
Tonndorf, Philipp [1 ]
Schmidt, Robert [1 ]
Boettger, Philipp [1 ]
Zhang, Xiao [1 ]
Boerner, Janna [2 ]
Liebig, Andreas [1 ]
Albrecht, Manfred [1 ]
Kloc, Christian [3 ]
Gordan, Ovidiu [1 ]
Zahn, Dietrich R. T. [1 ]
de Vasconcellos, Steffen Michaelis [1 ]
Bratschitsch, Rudolf [1 ]
机构：
[1] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
[2] Tech Univ Chemnitz, Inst Chem, D-09107 Chemnitz, Germany
[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
来源：
OPTICS EXPRESS | 2013年 / 21卷 / 04期
关键词：
KRAMERS-KRONIG ANALYSIS; REFLECTIVITY SPECTRA; 2H-MOSE2; PHONONS;
D O I：
10.1364/OE.21.004908
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form. (C) 2013 Optical Society of America
引用
收藏
页码：4908 / 4916
页数：9
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