Index-Matched Indium Tin Oxide Electrodes for Capacitive Touch Screen Panel Applications

被引：31

作者：

Hong, Chan-Hwa ^{[1
,2
]}

Shin, Jae-Heon ^{[1
]}

Ju, Byeong-Kwon ^{[2
]}

Kim, Kyung-Hyun ^{[1
]}

Park, Nae-Man ^{[1
]}

Kim, Bo-Sul ^{[1
]}

Cheong, Woo-Seok ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Taejon 305700, South Korea

[2] Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 11期

关键词：

Index Matched ITO; Capacitive Touch Screen Panel;

D O I：

10.1166/jnn.2013.7814

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Index-matched indium tin oxide (ITO) electrodes for capacitive touch screen panels have been fabricated to improve optical transmittance and reduce the difference of reflectance (Delta R) between the etched and un-etched regions. 8.5 nm Nb2O5 and 49 nm SiO2 thin films were deposited by magnetron sputtering as index-matching layers between an ITO electrode and a glass substrate. In case of 30 nm ITO electrode, a 4.3% improvement in the optical transmittance and a Delta R of less than 1% were achieved, along with a low sheet resistance of 90 Omega/square.

引用

页码：7756 / 7759

页数：4

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