50-Gb/s Direct Modulation of a 1.3-μm InGaAlAs-Based DFB Laser With a Ridge Waveguide Structure

被引:98
|
作者
Kobayashi, Wataru [1 ]
Ito, Toshio [1 ]
Yamanaka, Takayuki [1 ]
Fujisawa, Takeshi [1 ]
Shibata, Yasuo [1 ]
Kurosaki, Takeshi [1 ]
Kohtoku, Masaki [1 ]
Tadokoro, Takashi [2 ]
Sanjoh, Hiroaki [1 ]
机构
[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan
[2] Tokyo Denki Univ, Dept Elect & Elect Engn, Tokyo 1208551, Japan
关键词
Direct modulation; directly modulated laser (DML); distributed-feedback (DFB) lasers; InGaAlAs; ridge waveguide structure; 1.3; MU-M;
D O I
10.1109/JSTQE.2013.2238509
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate 50-Gb/s direct modulation by using 1.3-mu m distributed-feedback lasers with a ridge waveguide structure. We employed InGaAlAs material for a multiple-quantum well to obtain a low damping factor K, and fabricated a ridge waveguide structure buried in benzocyclobutene to realize a structure with a low parasitic capacitance. In addition, to obtain high maximum frequency relaxation oscillations fr, we designed the cavity length L), and achieved a 3-dB-down frequency bandwidth of 34 GHz. We realized 50-Gb/s clear eye openings with a back-to-back configuration, and achieved a mean output power of over 5.0 dBm, and a dynamic extinction ratio of 4.5 dB. We measured the 50-Gb/s transmission characteristics, and obtained clear eye openings for transmissions over 20-, 40-, and 60-km single-mode fibers (SMF). We also measured the bit-error-rate performance, and obtained an error-free operation and a power penalty of less than 0.5 dB after a 10-km SMF transmission.
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页数:8
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