Thin Dielectric Films Grown by Atomic Layer Deposition: Properties and Applications

被引:0
|
作者
Campabadal, F. [1 ]
Rafi, J. M. [1 ]
Gonzalez, M. B. [1 ]
Zabala, M. [1 ]
Beldarrain, O. [1 ]
Acero, M. C. [1 ]
Duch, M. [1 ]
机构
[1] CSIC, IMB CNM, Inst Microelect Barcelona, Bellaterra, Spain
关键词
ALD; Al2O3; HfO2; KAPPA GATE DIELECTRICS; ISSUES; AL2O3;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 50 条
  • [1] Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
    Jang, Yoonseo
    Lee, Seung Min
    Jung, Do Hwan
    Yum, Jung Hwan
    Larsen, Eric S.
    Bielawski, Christopher W.
    Oh, Jungwoo
    [J]. SOLID-STATE ELECTRONICS, 2020, 163
  • [2] Dielectric and optical properties of Zr silicate thin films grown on Si(100) by atomic layer deposition
    Tahir, Dahlang
    Lee, Eun Kyoung
    Oh, Suhk Kun
    Kang, Hee Jae
    Heo, Sung
    Chung, Jae Gwan
    Lee, Jae Cheol
    Tougaard, Sven
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (08)
  • [3] Ruthenium thin films grown by atomic layer deposition
    Aaltonen, Titta
    Alén, Petra
    Ritala, Mikko
    Leskelä, Markku
    [J]. Advanced Materials, 2003, 15 (01) : 45 - 49
  • [4] Ruthenium thin films grown by atomic layer deposition
    Aaltonen, T
    Alén, P
    Ritala, M
    Leskelä, M
    [J]. CHEMICAL VAPOR DEPOSITION, 2003, 9 (01) : 45 - 49
  • [5] Luminescence properties of europium titanate thin films grown by atomic layer deposition
    Hansen, Per-Anders
    Fjellvag, Helmer
    Finstad, Terje G.
    Nilsen, Ola
    [J]. RSC ADVANCES, 2014, 4 (23): : 11876 - 11883
  • [6] Tunable optical properties in atomic layer deposition grown ZnO thin films
    Pal, Dipayan
    Mathur, Aakash
    Singh, Ajaib
    Singhal, Jaya
    Sengupta, Amartya
    Dutta, Surjendu
    Zollner, Stefan
    Chattopadhyay, Sudeshna
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (01):
  • [7] PROPERTIES OF TANTALUM OXIDE THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION
    KUKLI, K
    AARIK, J
    AIDLA, A
    KOHAN, O
    UUSTARE, T
    SAMMELSELG, V
    [J]. THIN SOLID FILMS, 1995, 260 (02) : 135 - 142
  • [8] Electrical properties of quaternary HfAlTiO thin films grown by atomic layer deposition
    Alekhin, A. P.
    Chouprik, A. A.
    Grigal, I. P.
    Gudkova, S. A.
    Lebedinskii, Yu. Yu.
    Markeev, A. M.
    Zaitsev, S. A.
    [J]. THIN SOLID FILMS, 2012, 520 (14) : 4547 - 4550
  • [9] Studies on polycrystalline ZnS thin films grown by atomic layer deposition for electroluminescent applications
    Kim, YS
    Yun, SJ
    [J]. APPLIED SURFACE SCIENCE, 2004, 229 (1-4) : 105 - 111
  • [10] Lithium Phosphate Thin Films Grown by Atomic Layer Deposition
    Hamalainen, Jani
    Holopainen, Jani
    Munnik, Frans
    Hatanpaa, Timo
    Heikkila, Mikko
    Ritala, Mikko
    Leskela, Markku
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (03) : A259 - A263