Effect of Ionizing Radiation and Temperature on SiGe HBT

被引：0
|
作者：
Verma, Yogesh Kumar [1 ]
Mishra, Varun [1 ]
Verma, Prateek Kishor [1 ]
Gupta, Santosh Kumar [1 ]
Chauhan, Rajeev Kumar [2 ]
机构：
[1] Motilal Nehru Natl Inst Technol, Elect & Commun Engn Dept, Allahabad, Uttar Pradesh, India
[2] Madan Mohan Malaviya Univ Technol, Elect & Commun Engn Dept, Gorakhpur, Uttar Pradesh, India
来源：
2018 5TH IEEE UTTAR PRADESH SECTION INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS AND COMPUTER ENGINEERING (UPCON) | 2018年
关键词：
SiGe; HBT; radiation; temperature; BiCMOS;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
In this brief, a thorough investigation is performed to analyze the effect of ionizing radiation and temperature on SiGe HBT. The effect of 1 Mrad (Si) gamma total dose is analyzed on device performance parameters: base transit time, cut-off frequency, and maximum oscillation frequency. Also, the effects of both intrinsic and extrinsic reliability issues i.e., radiation rich environment, temperature, and self heating are analyzed on SiGe HBT and SiGe BiCMOS HBT using TCAD.
引用
收藏
页码：243 / 248
页数：6
相关论文
共 50 条
  • [1] Impact of Extrinsic Reliability Issues including Radiation and Temperature on SiGe HBT
    Verma, Yogesh Kumar
    Mishra, Varun
    Verma, Prateek Kishor
    Gupta, Santosh Kumar
    Chauhan, Rajeev Kumar
    2018 INTERNATIONAL CONFERENCE ON COMPUTATIONAL AND CHARACTERIZATION TECHNIQUES IN ENGINEERING & SCIENCES (CCTES), 2018, : 100 - 105
  • [2] Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD
    Babcock, JA
    Cressler, JD
    Vempati, LS
    Clark, SD
    Jaeger, RC
    Harame, DL
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) : 1558 - 1566
  • [3] Temperature dependence of SiGe HBT static and dynamic characteristics
    Aniel, F
    Zerounian, N
    Gruhle, A
    Mahner, C
    Vernet, G
    Adde, R
    JOURNAL DE PHYSIQUE IV, 1998, 8 (P3): : 81 - 86
  • [4] Evaluation of hot carrier effect of SiGe HBT
    Lin, Xiao-Ling
    Kong, Xue-Dong
    En, Yun-Fei
    Zhang, Xiao-Wen
    Yao, Ruo-He
    Huanan Ligong Daxue Xuebao/Journal of South China University of Technology (Natural Science), 2009, 37 (05): : 23 - 26
  • [5] TEMPERATURE DEPENDENCE OF IONIZING RADIATION EFFECT ON DRY HYALURONIDASE
    VOLLMER, RT
    FLUKE, DJ
    RADIATION RESEARCH, 1967, 31 (04) : 867 - +
  • [6] TEMPERATURE-DEPENDENCE OF THE EFFECT OF IONIZING RADIATION ON CATALASE
    SETLOW, RB
    SCIENCE, 1951, 114 (2967) : 487 - 487
  • [7] THE EFFECT OF TEMPERATURE ON THE DIRECT ACTION OF IONIZING RADIATION ON CATALASE
    SETLOW, R
    DOYLE, B
    ARCHIVES OF BIOCHEMISTRY AND BIOPHYSICS, 1953, 46 (01) : 46 - 52
  • [8] An investigation of ionizing radiation damage in different SiGe processes
    Li, Pei
    Liu, Mo-Han
    He, Chao-Hui
    Guo, Hong-Xia
    Zhang, Jin-Xin
    Ma, Ting
    CHINESE PHYSICS B, 2017, 26 (08)
  • [9] An investigation of ionizing radiation damage in different SiGe processes
    李培
    刘默寒
    贺朝会
    郭红霞
    张晋新
    马婷
    Chinese Physics B, 2017, (08) : 555 - 560
  • [10] Silicon nitride as dielectric in the low temperature SiGe HBT processing
    Ren, QW
    Nanver, LK
    deBoer, CR
    vanZeijl, HW
    MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 179 - 182
12345