Size-dependent photoluminescence in silicon nanostructures: quantum confinement effect

被引：14
|
作者：
Kumar, V. [1 ]
Saxena, K. [1 ]
Shukla, A. K. [1 ]
机构：
[1] Indian Inst Technol, Dept Phys, Laser Assisted Mat Proc & Raman Spect Lab, New Delhi 110016, India
来源：
MICRO & NANO LETTERS | 2013年 / 8卷 / 06期
关键词：
POROUS SILICON; CRYSTALLINE SILICON; OPTICAL-PROPERTIES; LIGHT-EMISSION; LUMINESCENCE; NANOCRYSTALS; SHAPE;
D O I：
10.1049/mnl.2012.0910
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Visible photoluminescence (PL) from laser-etched silicon nanostructures has been analysed. A systematic size dependence study of PL from silicon nanostructures has been performed. The PL from these structures is attributed to the quantum confinement effect. Different quantum confinement models have been used for PL and Raman lineshape fitting to calculate the mean size and size distribution of silicon nanostructures and the results are comparatively studied. Calculated values of oscillator strength and radiative lifetime show that PL is due to radiative recombination of confined excitons.
引用
收藏
页码：311 / 314
页数：4
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