Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

被引：0

作者：

Ganz, P. R. ^{[1
]}

Schaadt, D. M.

机构：

[1] KIT, DFG Ctr Funct Nanostruct CFN, Wolfgang Gaede Str 1A, D-76131 Karlsruhe, Germany

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

diluted magnetic semiconductors; group-III nitrides; spinalingement; molecular beam epitaxy; GAN; FERROMAGNETISM; ORIGIN;

D O I：

10.1063/1.3666565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

引用

页数：2

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