Study on polarization switching as a function of composition in PZT thin films

被引：0
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作者：
Belegundu, U
机构：
来源：
ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polarization switching has been studied as a function of composition and processing conditions. In tetragonal region remnant polarization and coercive field increased for higher annealing temperatures. A definite threshold field values where P-R and E-C saturated was observed This is presumed to be due to internal fields created by space charge layers. When studied as a function of composition dependence of P-R and E-C showed saturation in MPB region. Lowest threshold field values was observed for films with Zr = 0.50. A maximum of P-R = 35 mu c/cm(2) for Zr = 0.50 and a minimum of E-C = 43 kV/cm for Zr = 0.55 was obtained.
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页码：427 / 430
页数：4
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